@article {RN96,
	title = {GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric},
	journal = {Materials Science and Engineering B-Solid State Materials for Advanced Technology},
	volume = {135},
	number = {3},
	year = {2006},
	pages = {282-284},
	type = {Journal Article},
	issn = {0921-5107},
	doi = {10.1016/j.mseb.2006.08.020},
	url = {\&lt;Go to ISI\&gt;://WOS:000242654400025},
	author = {Wu, Y. Q. and Ye, P. D. and Wilk, G. D. and Yang, B.}
}
