Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit

Citation:

Fan Z, Wang M, Wei J, Nuo M, Zhou J, Zhang J, Hao Y, Shen B. Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit. IEEE Transactions on Power Electronics. 2024;39:2351-2359.