<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fan, Zetao</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Nuo, Muqin</style></author><author><style face="normal" font="default" size="100%">Zhou, Jin</style></author><author><style face="normal" font="default" size="100%">Zhang, Jiaxin</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Power Electronics</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Bridge-leg circuit</style></keyword><keyword><style  face="normal" font="default" size="100%">enhancement mode</style></keyword><keyword><style  face="normal" font="default" size="100%">false turn-on</style></keyword><keyword><style  face="normal" font="default" size="100%">gate driver design consideration</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">negative threshold voltage shift</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky diodes</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky-type p-GaN high-electron mobility transistors (HEMTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Switches</style></keyword><keyword><style  face="normal" font="default" size="100%">Switching circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Voltage measurement</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><number><style face="normal" font="default" size="100%">2</style></number><volume><style face="normal" font="default" size="100%">39</style></volume><pages><style face="normal" font="default" size="100%">2351-2359</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>