摘要:

In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented. The model is constructed based on experimental S-parameters up to 110 GHz of a 22FDX® thick-oxide n-MOSFET and analytical parameter extraction approach. The non-quasi static effect is addressed thoroughly in the equivalent circuit model for high frequency validity. The bias-dependent series source and drain resistances are considered to account for the overlap regions between the gate and the highly doped source/drain regions. In addition, a simple RC network is included at the output to model the innegligible substrate coupling at mm-wave frequencies. Excellent agreements between model prediction and measurement are observed in the interested bandwidth for various bias conditions.

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