<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Quang Huy Le</style></author><author><style face="normal" font="default" size="100%">Dang Khoa Huynh</style></author><author><style face="normal" font="default" size="100%">Defu Wang</style></author><author><style face="normal" font="default" size="100%">Thomas Kämpfe</style></author><author><style face="normal" font="default" size="100%">Matthias Rudolph</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Small-Signal Modeling of mm- Wave MOSFET up to 110 GHz in 22nm FDSOI Technology</style></title><secondary-title><style face="normal" font="default" size="100%">2019 IEEE Asia-Pacific Microwave Conference (APMC)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/9038620</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Singapore</style></pub-location><pages><style face="normal" font="default" size="100%">222-224</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented. The model is constructed based on experimental S-parameters up to 110 GHz of a 22FDX® thick-oxide n-MOSFET and analytical parameter extraction approach. The non-quasi static effect is addressed thoroughly in the equivalent circuit model for high frequency validity. The bias-dependent series source and drain resistances are considered to account for the overlap regions between the gate and the highly doped source/drain regions. In addition, a simple RC network is included at the output to model the innegligible substrate coupling at mm-wave frequencies. Excellent agreements between model prediction and measurement are observed in the interested bandwidth for various bias conditions.</style></abstract></record></records></xml>