@proceedings {37396,
	title = {Small-Signal Modeling of mm- Wave MOSFET up to 110 GHz in 22nm FDSOI Technology},
	journal = {2019 IEEE Asia-Pacific Microwave Conference (APMC)},
	year = {2019},
	pages = {222-224},
	publisher = {IEEE},
	address = {Singapore},
	abstract = {In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented. The model is constructed based on experimental S-parameters up to 110 GHz of a 22FDX{\textregistered} thick-oxide n-MOSFET and analytical parameter extraction approach. The non-quasi static effect is addressed thoroughly in the equivalent circuit model for high frequency validity. The bias-dependent series source and drain resistances are considered to account for the overlap regions between the gate and the highly doped source/drain regions. In addition, a simple RC network is included at the output to model the innegligible substrate coupling at mm-wave frequencies. Excellent agreements between model prediction and measurement are observed in the interested bandwidth for various bias conditions.},
	url = {https://ieeexplore.ieee.org/abstract/document/9038620},
	author = {Quang Huy Le and Dang Khoa Huynh and Defu Wang and Thomas K{\"a}mpfe and Matthias Rudolph}
}
