摘要:

This paper presents a fabrication technology of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) using standard fluorine ion implantation. An 80 nm silicon nitride layer was deposited on the AlGaN as an energy-absorbing layer that slows down the high energy (similar to 25 keV) fluorine ions so that majority of the fluorine ions are incorporated in the AlGaN barrier. The threshold voltage was successfully shifted from -1.9 to +1.8 V, converting depletion mode HEMTs to enhancement-mode ones. The fluorine ion distribution profile was confirmed by Secondary Ion Mass Spectrometry (SIMS). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562273] All rights reserved.