Wang EG, Chen C, Ting CS. Tight-binding calculation of ZnSe/Ge superlattices: electronic structure and optical property. Journal of Applied Physics. 1995;(3):1832-1837.

Wang EG, Zhou Y, Ting CS, Zhang J, Pang T, Chen C. Excitons in spatially separated electron-hole systems: A quantum Monte Carlo study. Journal of Applied Physics. 1995;(12):7099-7102.

Wang EG, Su WP, Ting CS. Effect of the degree of disorder on electronic and optical properties in random superlattices. Journal of Applied Physics. 1994;(5):3004-3008.

Wang EG, Xu JH, Su WP, Ting CS. Enhancement of optical absorption induced by disorder in three-dimensional random superlattices. Applied Physics Letters. 1994;(4):443-445.

Wang EG, Decarpigny JN, Allan G. Geometric and electronic structure of a magnesium overlayer on the GaAs(110) surface. Journal of Physics Condensed Matter. 1994;(27):4999-5006.

Wang EG, Xu JH, Su WP, Ting CS. Electronic structures of Sb/Ga(Al)Sb (111) semimetal-semiconductor superlattices. Journal of Applied Physics. 1994;(9):5318-5326.

Wang EG, Xu JH, Su WP, Ting CS. Optical and electronic properties of GaAs/AlAs random superlattices. Materials Research Society Symposium Proceedings. 1994:481-486.

Xu JH, Wang EG, Ting CS, Su WP. Tight-binding theory of the electronic structures for rhombohedral semimetals and Sb/GaSb, Sb/AlSb superlattices. Materials Research Society Symposium Proceedings. 1994:585-590.

Xu JH, Wang EG, Ting CS, Su WP. Tight-binding theory of the electronic structures for rhombohedral semimetals and Sb/GaSb, Sb/AlSb superlattices. Materials Research Society Symposium Proceedings. 1994:487-492.

Jiang J, Zhou X, Du A, Peng L-M, Wang E, Mu S, Zhong Z. A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface. Superlattices and Microstructures. 1993;(3):379-.

Wang EG, Jiang J, Zhou XC, Du AY, Peng LM. Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices. Superlattices and Microstructures. 1993;(3):387-.

Wang EG, Xu JH, Su WP, Ting CS. Electronic structure of periodic random superlattice [(GaAs) m/(AlAs)n]l. Applied Physics Letters. 1993;(10):1411-1413.

Wang E. A model for the buffer layer formed on silicon during HFCVD diamond growth. Physica B: Physics of Condensed Matter. 1993;(1-4):85-89.

Xu JH, Wang EG, Ting CS, Su WP. Tight-binding theory of the electronic structures for rhombohedral semimetals. Physical Review B. 1993;(23):17271-17279.

Wang E-G, Wang D-S. Native defects in a (GaP)1/(InP)1 strained-layer superlattice: Local electronic structure and diffusion mechanism. Journal of Physics: Condensed Matter. 1992;(5):1311-1321.

Xu H, Zhou X, Xu G, Du Q, Wang E, Wang D, Zhang L, Chen C. Photoreflectance study of AlAs/GaAs gradient period superlattice. Applied Physics Letters. 1992;(18):2193-2195.

Wang E-G. Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface. Superlattices and Microstructures. 1991;(4):431-435.

Wang E-G, Jin W-M, Zhang L-Y, Wang H-Y. Local electronic structures of the native defects in modulation-doped AlAs/GaAs superlattices. Journal of Physics: Condensed Matter. 1990;(19):4405-4416.

Wang E, Zhang L, Wang H. Influence of impurities and vacancies on electronic properties of AlAs/GaAs superlattices. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 1990;(4):243-252.

Wang E-G, Zhang L-Y, Wang H-Y. Local density of states of silicon impurity in lightly and heavily doped AlAs/GaAs superlattices. Materials Science and Engineering B. 1990;(3):371-375.