A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface

Citation:

Jiang J, Zhou X, Du A, Peng L-M, Wang E, Mu S, Zhong Z. A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface. Superlattices and Microstructures. 1993;(3):379-.