科研成果 by Year: 1998

1998
Chen C, Wang EG, Gu YM, Bylander DM, Kleinman L. Unexpected band-gap collapse in quaternary alloys at the group-III-nitride/GaAs interface: GaAlAsN. Physical Review B - Condensed Matter and Materials Physics. 1998;(7):3753-3756.
Li J-L, Meng G, Wu K-hui, Wang E-G. Highly oriented diamond film growth by atomic force microscopy. Chinese Physics Letters. 1998;(11):822-824. SCI被引用次数:4.
Chen J, Xu N-S, Wang E-G, Deng S-Z, Chen D-H, Wei A-X. A study of field electron emission from thin amorphous-carbon-nitride films. Chinese Physics Letters. 1998;(7):539-541. SCI被引用次数:10.
Zhou Y-M, Wang EG. First-principles study of structural stability and electronic properties of Sb/GaSb(111) semimetal-semiconductor superlattice. Journal of Applied Physics. 1998;(8):4309-4313.
Chen Y, Chen F, Wang EG. Uniform and rapid nucleation of diamond via bias-assisted hot filament chemical vapor deposition. Journal of Materials Research. 1998;(1):126-130.
Werninghaus T, Zahn DRT, Wang EG, Chen Y. Micro-Raman spectroscopy investigation of C3N4 crystals deposited on nickel substrates. Diamond and Related Materials. 1998;(1):52-56.
Liu G, Wang E-G. Extended molecular dynamics scheme for crystals with fully relaxed size and shape. Solid State Communications. 1998;(11):671-674.
Yu J, Wang EG, Xu G. Observations of micrometer BCN rods by bias-assisted hot-filament chemical vapor deposition. Chemical Physics Letters. 1998;(4-6):531-534.
Luo X, Qian G, Fei W, Wang EG, Chen C. Systematic study of β-SiC surface structures by molecular-dynamics simulations. Physical Review B - Condensed Matter and Materials Physics. 1998;(15):9234-9240.
Wu K, Wang EG, Qing J, Xu G. Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond. Journal of Applied Physics. 1998;(3):1702-1704.
Wang C-Z, Wang E-G, Dai Q. First principles calculations of structural properties of βSi3-nCnN4 (n=0, 1, 2, 3). Journal of Applied Physics. 1998;(4):1975-1978.
Chen J, Deng SZ, Xu NS, Wu KH, Wang EG. Observation of a new type of field-induced electron emission from a diamond-based heterostructure. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. 1998:174-175.