Citation:Hu Q, Gu C, Zhan D, Li X, Wu Y. Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress. IEEE Journal of the Electron Devices Society. 2021;9:511–516.ExportBibTex EndNote Tagged EndNote XML
Wang M, Zhan D, Wang X, Hu Q, Gu C, Li X, Wu Y. Performance optimization of atomic layer deposited ZnO thin-film transistors by vacuum annealing. IEEE Electron Device Letters. 2021;42:716–719.
Gao Q, Zhang C, Yi Z, Pan X, Chi F, Liu L, Li X, Wu Y. Improved low-frequency noise in CVD bilayer MoS2 field-effect transistors. Applied Physics Letters. 2021;118:153103.
Hu Q, Gu C, Zhan D, Li X, Wu Y. Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress. IEEE Journal of the Electron Devices Society. 2021;9:511–516.
Li X, Yu B, Wang B, Bao L, Zhang B, Li H, Yu Z, Zhang T, Yang Y, HUANG R, et al. Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems. Nanoscale. 2020;12:16348–16358.
Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. ACS applied materials & interfaces. 2020;12:17686–17690.
Gao Q, Zhang C, Zhang Z, Yi Z, Pan X, Chi F, Liu L, Li X, Wu Y. High-Frequency Performance of MoS 2 Transistors at Cryogenic Temperatures, in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE; 2020:1–3.
Hu Q, Wu Y. Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors, in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE; 2020:1–3.
Li S, Gu C, Li X, HUANG R, Wu Y. 10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility, in 2020 IEEE International Electron Devices Meeting (IEDM). IEEE; 2020:40–5.
Xiong X, Kang J, Hu Q, Gu C, Gao T, Li X, Wu Y. Reconfigurable Logic-in-Memory and Multilingual Artificial Synapses Based on 2D Heterostructures. Advanced Functional Materials. 2020;30:1909645.
Xiong X, Huang M, Hu B, Li X, Liu F, Li S, Tian M, Li T, Song J, Wu Y. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics. 2020;3:106–112.
Li S, Tian M, Gu C, WANG R, Wang M, Xiong X, Li X, HUANG R, Wu Y. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with I on= 970 $μ$A/$μ$m and on/off ratio near 10 11 at V ds= 0.5 V, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:3–5.
Wang M, Tian M, Zhang Z, Li S, WANG R, Gu C, Shan X, Xiong X, Li X, HUANG R, et al. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:8–2.
Hu Q, Zhang Z, Wu Y. High performance optoelectronics based on CVD Mos2, in 2019 IEEE 13th International Conference on ASIC (ASICON). IEEE; 2019:1–3.
Tian M, Hu B, Yang H, Tang C, Wang M, Gao Q, Xiong X, Zhang Z, Li T, Li X, et al. Wafer scale mapping and statistical analysis of radio frequency characteristics in highly uniform CVD graphene transistors. Advanced Electronic Materials. 2019;5:1800711.
Li X, Yu Z, Xiong X, Li T, Gao T, WANG R, HUANG R, Wu Y. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science advances. 2019;5:eaau3194.
Li S, Tian M, Gao Q, Wang M, Li T, Hu Q, Li X, Wu Y. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials. 2019;18:1091–1097.
Hu Q, Hu B, Gu C, Li T, Li S, Li S, Li X, Wu Y. Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering. IEEE Transactions on Electron Devices. 2019;66:4591–4596.
Bao L, Zhu J, Yu Z, Jia R, Cai Q, Wang Z, Xu L, Wu Y, Yang Y, Cai Y, et al. Dual-gated MoS2 neuristor for neuromorphic computing. ACS applied materials & interfaces. 2019;11:41482–41489.
Li S, Hu Q, Wang X, Li T, Li X, Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOX as Gate Dielectric. Ieee Electron Device Letters [Internet]. 2019;40:295-298. 访问链接SCI被引用次数：12.
