This paper presents the W-band noise performance of the 22nm FDSOI CMOS technology. In detail, the mm-wave thin-oxide MOSFETs is characterized comprehensively in term of device geometries using the tuner-based noise measurement approach. To aid the noise analysis and extraction, the following study adopts an accurate small-signal equivalent circuit model validated well with bias-dependence up to 110 GHz. The effects of back-gate bias to the overall noise performance are also addressed in this work. The test devices exhibit low noise figure in the full W-band 75-110 GHz. Besides, NF min of 2.8 dB and 3.6 dB is recorded at 94 GHz respectively for the n- and p-FETs with 18nm gate-length (N f = 32, W f = 1.0 µm). The result of this study indicates the comparable performance of the 22nm FDSOI technology to other candidates for W-band applications.
This paper presents a wideband integrated dielectric sensor with read-out circuit at 207-257 GHz in SiGe BiCMOS technology. The sensing element is equipped by a resonator that provides a bandpass frequency response which is varied in accordance to the carried permittivity change of the device under test. This variation can be sensed and recorded as the change of output voltage of an integrated 207-257 GHz 2 port vector network analyzer readout circuit. The demonstration of aforementioned readout system is verified by measuring the output of mixers as the reference, reflected and measured channel, and the uncalibrated S parameters of readout with different samples.
This paper investigates the applicability of a thick-oxide transistor from the 22FDX® for 5G NR sub-6 GHz front-end modules. Characterization and evaluation of the GlobalFoundries's FDSOI n-MOSFET regarding RF front-end figure-of-merits, such as output power, efficiency and linearity are discussed. Load-pull measurements are performed to extract the optimal performance. The test transistor delivers saturation power of +5.0 dBm and more than 65% of PAE while maintaining flat transducer gain of 10.2 ± 0.2 dB across the targeted frequency range for a 1.5 V single-ended class AB operation. Besides, the low PAE roll-off in term of reducing supply voltage and the particular 60% PAE at 10 dB output back-off indicate that the DUTs are well suitable for envelope tracking applications. Additional reliability tests at strong compression levels are conducted from which low performance degradation over time is observed even at 9 dB output compression.
This work presents a detailed study on the high-frequency performance of 22FDX ® FDSOI for 5G front-end power amplifiers. The following report focuses on the S-parameters and large-signal figure-of-merits such as output power, gain and power-added efficiency for an insightful and correct assessment on the device capability. DC characteristics of the test transistors are firstly investigated to determine the optimum operating point. Small-signal characterization is performed up to 110 GHz using a state-of-the-art mm-Wave measurement setup. An overall MSG/MAG of 16 ± 4 dB is recorded in the frequency range 10 - 80 GHz. On the other hand, large-signal performance on non-50 Ohm impedance environment is evaluated thoroughly through vector-receiver load-pull measurement up to 24 GHz. The measured output power and efficiency indicate that the DUTs perform well in the sub-6 GHz band and even in K-band. The outstanding experimental results emphasize the applicability and suitability of the 22FDX ® FDSOI technology platform for 5G low-power transmitters.
Stretchable and movable 3D structure is a great choice for sensing stretching and bending. This paper reports a novel cross-shaped 3D buckling strain sensor based on polydimethylsiloxane (PDMS) substrate for detecting stretching and bending. Using pre-stretched PDMS, cross-shaped Polyimide (PI) film with conductive silver paint on its top surface as a 2D precursor can pop up as a dynamic 3D structure and possesses capacitive effect and triboelectric effect under different stretching and bending, which can detect stretching directions, strain value, bending axis direction and radius of curvature simultaneously, showing great potential in human and robot applications.
This paper presents a 60 GHz phase shifter, based on a coplanar waveguide (CPW) transmission line, loaded with ferroelectric hafnium zirconium oxide (HZO) variable metal-insulator-metal (MIM) varactors, developed for the back-end-of-line (BEoL) on-chip integration. Using the measured data of capacitance-voltage (C-V) characteristics of HZO and implementing the method-of-moments simulation, it was shown, that by changing the bias voltage between 0.95 and -3 V, the device shows a phase shift of 111° and a minimum insertion loss of -5.84 dB at 60 GHz. The chip area of the device is 0.206 mm 2 , making it the smallest among non-CMOS phase shifters.
Zhang L, Wang Q, Xing H, Li E, Chen Y, Liu Y. Personality effect on driving behavior. 5th ACM SIGSPATIAL International Workshop on the Use of GIS in Emergency Management, EM-GIS 2019. 2019.Abstract