科研成果 by Type: Conference Proceedings

This paper reports a novel self-powered three-dimension motion sensor capable of independently detecting contact trajectory, pressure and velocity based on triboelectrification and electrostatic induction synchronously. Motion trajectories in the full plane can be identified by using a unique net-cross electrodes configuration design. In addition, the patterned silver nanowires (AgNWs) electrodes are sprayed onto the polydimethylsilane (PDMS) substrate to achieve good transparency and stretchability. By attaching the 3D motion sensor on human skin or robot surface directly, the 3D motion information of the object could be acquired including pressure, velocity and trajectory. The self-powered 3D motion sensor is a promising candidate in terms of human-computer interaction, anti-counterfeiting signatures, etc.

In this paper, a comprehensive analysis on small-signal modeling of mm-wave transistor in 22nm FDSOI technology is presented. The model is constructed based on experimental S-parameters up to 110 GHz of a 22FDX® thick-oxide n-MOSFET and analytical parameter extraction approach. The non-quasi static effect is addressed thoroughly in the equivalent circuit model for high frequency validity. The bias-dependent series source and drain resistances are considered to account for the overlap regions between the gate and the highly doped source/drain regions. In addition, a simple RC network is included at the output to model the innegligible substrate coupling at mm-wave frequencies. Excellent agreements between model prediction and measurement are observed in the interested bandwidth for various bias conditions.

In this paper, we present a scalable and general fabrication for micro-supercapacitors (MSCs) among various flexible substrates assisted by the stamp, which combines the conductive polymer composites with gravure printing process. Compared with the traditional transferring techniques, this method greatly simplifies the process and mitigates the mechanical damage during the preparation. Profiting from the composites of carbon nanotubes (CNTs) and polydimethylsiloxane (PDMS) as the printing inks, the MSCs exhibit elegant areal capacitance (10.491 μF/cm2) on the paper substrate. Meanwhile, optimizing the ratio of matrix and curing agent of PDMS, the interaction between ink and substrate is effectively enhanced. Therefore, such novel fabrication technology significantly improves the production efficiency as well as broadens the applications.

This paper presents a tunable 60 GHz band-pass filter, based on a coplanar waveguide (CPW) transmission line, periodically loaded with ferroelectric Hafnium Zirconium Oxide (HZO) variable metal-ferroelectric-metal (MIM) capacitors (varactors), developed for back-end-of-line (BEoL) integration. Derived from the nonlinear capacitance of hafnium zirconium oxide and implementing the method-of-moments simulation, it was shown, that with changing the bias voltage between 0.95 and -3 V, the filter’s center frequency can be tuned between 60.5 and 69,7 GHz, respectively. Hereby, a minimum insertion loss of -3.3 dB is realized. The chip area of the filter is only 0.062 mm 2 , making it the smallest among tunable V-band filters.

Emojis have become more and more popular in text-based online communication to express emotions. This indicates a potential to utilize emojis in sentiment analysis and emotion measurements. However, many factors could affect people’s emoji usage and need to be examined. Among them, age, gender, and relationship types may result in different interpretations of the same emoji due to the ambiguity of the iconic expression. In this paper, we aim to explore how these factors may affect the frequency, type, and sentiment of people’s emoji usage in communications. After analyzing 6,821 Wechat chatting messages from 158 participants, we found people between 26–35 had lowest frequency of emoji usage; younger and elder groups showed different sentiment levels for the same emojis; people chose emoji types based on relationships. These findings shed light on how people use emojis as a communication tool.

This paper for the first time prototypes and compares the homodyne and heterodyne terahertz dielectric sensors for lab-on-chip applications. The homodyne sensor consists of a multiplier chain, a balun-based power divider, an on-chip transducer, and IQ mixers. Differently, the heterodyne sensor requires an additional multiplier chain; however, it waives one mixer and a power divider, leading to reduced losses and alleviated power consumption. Fabricated using 0.13 µm SiGe BiCMOS technology, the homodyne and heterodyne sensors take 4 mm 2 and 5.2 mm 2 , and consume 400 mW and 499 mW, respectively. By experiments, both designed homodyne and heterodyne sensors can effectively sense the dielectric parameters of the samples. Moreover, the heterodyne sensor can address the DC offset issues with merely 99 mW additional power.

This paper presents two scalable resonator-based transducers (RBTs) at terahertz (THz) frequency range to realise THz spectroscopy for dielectric sensing. First, the design of 0.24 THz RBT is described by scaled a 0.12 THz sensing structures which utilises a wavelength-long closed-ring resonator to place inside of the Coplanar stripline (CPS) to make a high-selective bandpass response and combines with short-ended strips to create the bandstop behavior. Its scattering parameter can have a very large magnitude change and resonance frequency shift for the loaded samples. Next, a ring structure is also presented to implement 0.48 THz sensing by scaled a low frequency RBT, which employs ring resonator with an asymmetrically loaded stubs to perform a high analytic sensitivity and selectivity for loaded samples. Both presented scalable transducers, possessing the high integration capability of silicon circuits, are proved to be the promising employments in THz spectroscopy.

This paper presents a 3-stage differential cascode power amplifier (PA) for 109–137 GHz applications. At 120 GHz the circuit delivers 16.5 dBm saturated output power with 12.8 % power-added efficiency (PAE) without using power combining techniques. The chip was fabricated in 130 nm SiGe BiCMOS technology offering heterojunction bipolar transistors (HBT) with f T /f max of 300/500 GHz. The PA consists of three stages optimized accordingly to the design goals. The first stage operates in class A to provide high gain while the two following stages are biased in class AB and deep class AB in order to increase the efficiency. The circuit draws a maximum current of 100 mA from 3.3 V and 4 V supplies. It occupies only 0.24 mm 2 chip area excluding baluns and bondpads, which makes it attractive for future power combiners. The presented amplifier is suitable for radar applications, that require a high dynamic range.