科研成果 by Type: Conference Proceedings

2024
Xu W, Luo J, Fu B, Chen Z, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Multibit Content Addressable Memory with Dynamic and Static Modes for Energy-Efficient Training and Inference. 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). 2024:404-407.
Xu W, Luo J, Fu B, Chen Z, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Multibit Content Addressable Memory with Dynamic and Static Modes for Energy-Efficient Training and Inference. 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). 2024:404-407.
Xu W, Luo J, Fu Z, Han R, Bao S, Wang K, Huang Q, HUANG R. Novel Ferroelectric-Based Ising Machine Featuring Reconfigurable Arbitrary Ising Graph and Controllable Annealing Through Device-Algorithm Co-Optimization. 2024 IEEE International Electron Devices Meeting (IEDM). 2024:1-4.
Xu W, Luo J, Fu Z, Han R, Bao S, Wang K, Huang Q, HUANG R. Novel Ferroelectric-Based Ising Machine Featuring Reconfigurable Arbitrary Ising Graph and Controllable Annealing Through Device-Algorithm Co-Optimization. 2024 IEEE International Electron Devices Meeting (IEDM). 2024:1-4.
Xu W, Luo J, Fu B, Fu Z, Wang K, Su C, Huang Q, HUANG R. A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area-and Energy-Efficient Quantized Neural Networks. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024:1-3.
Xu W, Luo J, Fu B, Fu Z, Wang K, Su C, Huang Q, HUANG R. A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area-and Energy-Efficient Quantized Neural Networks. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024:1-3.
Xu S, Luo T, Luo J, HUANG R, Huang Q. A Novel Ternary Transistor with Nested Source Design Incorporating Hybrid Switching Mechanism for Low-Power and High-Performance Applications. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024:69-70.
Xu S, Luo T, Luo J, HUANG R, Huang Q. A Novel Ternary Transistor with Nested Source Design Incorporating Hybrid Switching Mechanism for Low-Power and High-Performance Applications. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024:69-70.
Qiu Y, Ma* Y, Wu M, Jia Y, Qu X, Zhou Z, Lou J, Jia T, Ye L, HUANG R. Quartet: A 22nm 0.09mJ/lnference Digital Compute-in-Memory Versatile AI Accelerator with Heterogeneous Tensor Engines and Off-Chip-Less Dataflow. IEEE Custom Integrated Circuits Conference (CICC) [Internet]. 2024. Links
Wu M, Ren W, Chen P, Zhao W, Jing Y, Ru J, Wang Z, Ma Y, HUANG R, Jia* T, et al. S2D-CIM: A 22nm 128Kb Systolic Digital Compute-in-Memory Macro with Domino Data Path for Flexible Vector Operation and 2-D Weight Update in Edge AI Applications. IEEE Custom Integrated Circuits Conference (CICC) [Internet]. 2024. Links
Xu N, Wang T, Jiang D, Zhao Y. Three-Dimensional Iontronic Force Sensor for Robotic Force Feedback. International Conference on Intelligent Robotics and Applications. 2024:239-247.
2023
Liu Y, Chen Z, Wang Z, Zhao W, He W, Zhu J, Wang Q, Zhang N, Jia T, Ma* Y, et al. A 22nm 0.43pJ/SOP Sparsity-Aware In-Memory Neuromorphic Computing System with Hybrid Spiking and Artificial Neural Network and Configurable Topology. IEEE Custom Integrated Circuits Conference (CICC) [Internet]. 2023. Links
Chen# P, Wu# M, ..., Ma* Y, Ye* L, HUANG R. A 22-nm Delta-Sigma Computing-In-Memory (ΔΣCIM) SRAM Macro with Near-Zero-Mean Outputs and LSB-First ADCs Achieving 21.38TOPS/W for 8b-MAC Edge AI Processing. IEEE International Solid-State Circuits Conference (ISSCC 2023) [Internet]. 2023. Links
Lee S, Li W, Zhang P, Wang J. Characterizing Data Practices in Research Papers Across Four Disciplines. International Conference on Information. 2023:359-368.
Shao H, Luo J, Fu Z, Huang Q, HUANG R. A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.
Shao H, Luo J, Fu Z, Huang Q, HUANG R. A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.
Ma Y, An X, Wu Z, Liu P, Lu C. Customer Mistreatment and Employees’ Coping Strategies: A Meta-SEM Analysis. The 83rd Annual Meeting of the Academy of Management. 2023.
Jing Y, Sun Y, Wang X, Zhao W, Wu M, Yan F, Ma Y, Ye L, Jia T. DCIM-3DRec: A 3D Reconstruction Accelerator with Digital Computing-in-Memory and Octree-Based Scheduler. IEEE/ACM Int. Symp. on Low Power Electronics and Design (ISLPED) [Internet]. 2023. Links
Fu B, Luo J, Xu W, Huang Q, HUANG R. Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.
Fu B, Luo J, Xu W, Huang Q, HUANG R. Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.

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