First demonstration of hafnia-based selector-free FeRAM with high disturb immunity through design technology co-optimization

Citation:

Fu Z, Cao S, Zheng H, Luo J, Huang Q, HUANG R. First demonstration of hafnia-based selector-free FeRAM with high disturb immunity through design technology co-optimization. 2023 International Electron Devices Meeting (IEDM). 2023:1-4.