Xu W, Luo J, Du Y, Huang Q, HUANG R. Novel Negative-Feedback Method for Writing Variation Suppression in FeFET-Based Computing-in-Memory Macro. 2022 China Semiconductor Technology International Conference (CSTIC). 2022:1-3.

Fu Z, Wang K, Fu B, Xu S, Zheng H, Luo J, Su C, Xu W, Lv X, Huang Q. Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation. 2022 International Electron Devices Meeting (IEDM). 2022:24.5. 1-24.5. 4.

Luo J, Shao H, Fu B, Fu Z, Xu W, Wang K, Yang M, Li Y, Lv X, Huang Q. Novel Ferroelectric Tunnel FinFET based Encryption-embedded Computing-in-Memory for Secure AI with High Area-and Energy-Efficiency. 2022 International Electron Devices Meeting (IEDM). 2022:36.5. 1-36.5. 4.

Luo J, Xu W, Fu B, Yu Z, Yang M, Li Y, Huang Q, HUANG R. A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022:226-227.

Huang Q, Yang M, Luo J, Su C, HUANG R. HfO 2-based Ferroelectric Devices for Low Power Applications. 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2022:285-287.