Fu Z, Wang K, Fu B, Xu S, Zheng H, Luo J, Su C, Xu W, Lv X, Huang Q. Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation. 2022 International Electron Devices Meeting (IEDM). 2022:24.5. 1-24.5. 4.

Luo J, Shao H, Fu B, Fu Z, Xu W, Wang K, Yang M, Li Y, Lv X, Huang Q. Novel Ferroelectric Tunnel FinFET based Encryption-embedded Computing-in-Memory for Secure AI with High Area-and Energy-Efficiency. 2022 International Electron Devices Meeting (IEDM). 2022:36.5. 1-36.5. 4.

Xu W, Luo J, Du Y, Huang Q, HUANG R. Novel Negative-Feedback Method for Writing Variation Suppression in FeFET-Based Computing-in-Memory Macro. 2022 China Semiconductor Technology International Conference (CSTIC). 2022:1-3.

Huang Q, Yang M, Luo J, Su C, HUANG R. HfO 2-based Ferroelectric Devices for Low Power Applications. 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2022:285-287.

Luo J, Xu W, Fu B, Yu Z, Yang M, Li Y, Huang Q, HUANG R. A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022:226-227.

Luo J, Chen C, Huang Q, HUANG R. A Biomimetic Tunnel FET-Based Spiking Neuron for Energy-Efficient Neuromorphic Computing With Reduced Hardware Cost. IEEE Transactions on Electron Devices. 2021;69(2):882-886.

Luo J, Xu W, Du Y, Fu B, SONG J, Fu Z, Yang M, Li Y, Ye L, Huang Q. Energy-and area-efficient Fe-FinFET-based time-domain mixed-signal computing in memory for edge machine learning. 2021 IEEE International Electron Devices Meeting (IEDM). 2021:19.5. 1-19.5. 4.

Luo J, Liu T, Fu Z, Wei X, Yang M, Chen L, Huang Q, HUANG R. A novel ferroelectric FET-based adaptively-stochastic neuron for stimulated-annealing based optimizer with ultra-low hardware cost. IEEE Electron Device Letters. 2021;43(2):308-311.

Liu T, Luo J, Wei X, Huang Q, HUANG R. A novel leaky-FeFET based true random number generator with ultralow hardware cost for neuromorphic application. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2021:1-3.

Fu Z, Chen C, Luo J, Huang Q, HUANG R. Device modeling and application simulation of ferroelectric-FETS with dynamic multi-domain behavior. 2020 China Semiconductor Technology International Conference (CSTIC). 2020:1-4.

Li Y, Luo J, Huang Q, An X, Ye L, HUANG R. A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction. 2020 China Semiconductor Technology International Conference (CSTIC). 2020:1-3.

Luo J, Yu L, Liu T, Yang M, Fu Z, Liang Z, Chen L, Chen C, Liu S, Wu S. Capacitor-less stochastic leaky-FeFET neuron of both excitatory and inhibitory connections for SNN with reduced hardware cost. 2019 IEEE International Electron Devices Meeting (IEDM). 2019:6.4. 1-6.4. 4.

Luo J, Lv Z, Huang Q-Q, Chen C, HUANG R. A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High I ON/I OFF. 2018 14th Ieee International Conference on Solid-State and Integrated Circuit Technology (Icsict). 2018:1-3.