Luo J, Song B, Lin Y, Fu Z, Fu B, Xu W, Shen L, Wang Y, Huang Q, HUANG R. Experimental Demonstration of Resonant Adiabatic Writing and Computing in Ferroelectric Capacitive Memory Array for Energy-Efficient Edge AI. 2024 IEEE International Electron Devices Meeting (IEDM). 2024:1-4.

Xu W, Luo J, Fu Z, Han R, Bao S, Wang K, Huang Q, HUANG R. Novel Ferroelectric-Based Ising Machine Featuring Reconfigurable Arbitrary Ising Graph and Controllable Annealing Through Device-Algorithm Co-Optimization. 2024 IEEE International Electron Devices Meeting (IEDM). 2024:1-4.

Xu W, Luo J, Huang Q, HUANG R. Compact and Efficient CAM Architecture through Combinatorial Encoding and Self-Terminating Searching for In-Memory-Searching Accelerator. Proceedings of the 61st ACM/IEEE Design Automation Conference. 2024:1-6.

Fu Z, Cao S, Zheng H, Luo J, Huang Q, HUANG R. Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM. IEEE Transactions on Electron Devices. 2024.

Ru Huang, Jin Luo TLQH. Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistor. 2024.

Xu W, Luo J, Fu Z, Wang K, Huang Q, HUANG R. A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area-and Energy-Efficiency. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024:1-3.

Xu W, Luo J, Fu B, Chen Z, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Multibit Content Addressable Memory with Dynamic and Static Modes for Energy-Efficient Training and Inference. 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). 2024:404-407.

Xu W, Luo J, Chen Z, Fu B, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for Area-and Energy-Efficient In-Memory-Searching System. IEEE Electron Device Letters. 2024.

Xu W, Luo J, Fu B, Fu Z, Wang K, Su C, Huang Q, HUANG R. A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area-and Energy-Efficient Quantized Neural Networks. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024:1-3.

Xu S, Luo T, Luo J, HUANG R, Huang Q. A Novel Ternary Transistor with Nested Source Design Incorporating Hybrid Switching Mechanism for Low-Power and High-Performance Applications. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024:69-70.

Luo J, Fu B, Du Y, Wei X, Su C, Yang M, Huang Q, HUANG R. Energy-efficient ferroelectric-FET-based agent with memory trace for enhanced reinforcement learning. IEEE Electron Device Letters. 2023;45(2):264-267.

Fu Z, Cao S, Zheng H, Luo J, Huang Q, HUANG R. First demonstration of hafnia-based selector-free FeRAM with high disturb immunity through design technology co-optimization. 2023 International Electron Devices Meeting (IEDM). 2023:1-4.

Shao H, Luo J, Fu Z, Huang Q, HUANG R. A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.

Fu B, Luo J, Xu W, Huang Q, HUANG R. Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.

Luo J, Liu T, Fu Z, Wei X, Huang Q, HUANG R. Ferroelectric FET based Signed Synapses of Excitatory and Inhibitory Connection fo Stochastic Spiking Neural Network based Optimizer. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2023:1-3.

Xu W, Luo J, Huang Q, HUANG R. A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning. 2023 Silicon Nanoelectronics Workshop (SNW). 2023:7-8.

Xu W, Luo J, Huang Q, HUANG R. A novel pulse-width-modulated FeFET-based analog content addressable memory with high area-and energy-efficiency. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2023:1-3.

Xu W, Fu Z, Wang K, Su C, Luo J, Chen Z, Huang Q, HUANG R. A novel small-signal ferroelectric capacitance-based content addressable memory for area-and energy-efficient lifelong learning. IEEE Electron Device Letters. 2023;45(1):24-27.

Luo J, Xu W, Fu B, Yu Z, Yang M, Li Y, Huang Q, HUANG R. A novel ambipolar ferroelectric tunnel FinFET based content addressable memory with ultra-low hardware cost and high energy efficiency for machine learning. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022:226-227.

Fu Z, Wang K, Fu B, Xu S, Zheng H, Luo J, Su C, Xu W, Lv X, Huang Q. Novel energy-efficient hafnia-based ferroelectric processing-in-sensor with in-situ motion detection and four-quarter mutipilcation. 2022 International Electron Devices Meeting (IEDM). 2022:24.5. 1-24.5. 4.