A novel ambipolar ferroelectric tunnel FinFET based content addressable memory with ultra-low hardware cost and high energy efficiency for machine learning

Citation:

Luo J, Xu W, Fu B, Yu Z, Yang M, Li Y, Huang Q, HUANG R. A novel ambipolar ferroelectric tunnel FinFET based content addressable memory with ultra-low hardware cost and high energy efficiency for machine learning. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022:226-227.