Luo J, Fu B, Du Y, Wei X, Su C, Yang M, Huang Q, HUANG R. Energy-efficient ferroelectric-FET-based agent with memory trace for enhanced reinforcement learning. IEEE Electron Device Letters. 2023;45(2):264-267.

Fu Z, Cao S, Zheng H, Luo J, Huang Q, HUANG R. First demonstration of hafnia-based selector-free FeRAM with high disturb immunity through design technology co-optimization. 2023 International Electron Devices Meeting (IEDM). 2023:1-4.

Xu W, Luo J, Huang Q, HUANG R. A novel pulse-width-modulated FeFET-based analog content addressable memory with high area-and energy-efficiency. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2023:1-3.

Luo J, Liu T, Fu Z, Wei X, Huang Q, HUANG R. Ferroelectric FET based Signed Synapses of Excitatory and Inhibitory Connection fo Stochastic Spiking Neural Network based Optimizer. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2023:1-3.

Xu W, Luo J, Huang Q, HUANG R. A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning. 2023 Silicon Nanoelectronics Workshop (SNW). 2023:7-8.

Shao H, Luo J, Fu Z, Huang Q, HUANG R. A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.

Fu B, Luo J, Xu W, Huang Q, HUANG R. Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.

Xu W, Fu Z, Wang K, Su C, Luo J, Chen Z, Huang Q, HUANG R. A novel small-signal ferroelectric capacitance-based content addressable memory for area-and energy-efficient lifelong learning. IEEE Electron Device Letters. 2023;45(1):24-27.