Fu Z, Cao S, Zheng H, Luo J, Huang Q, HUANG R. Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM. IEEE Transactions on Electron Devices. 2024.

Xu W, Luo J, Chen Z, Fu B, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for Area-and Energy-Efficient In-Memory-Searching System. IEEE Electron Device Letters. 2024.

Luo J, Fu B, Du Y, Wei X, Su C, Yang M, Huang Q, HUANG R. Energy-efficient ferroelectric-FET-based agent with memory trace for enhanced reinforcement learning. IEEE Electron Device Letters. 2023;45(2):264-267.

Xu W, Fu Z, Wang K, Su C, Luo J, Chen Z, Huang Q, HUANG R. A novel small-signal ferroelectric capacitance-based content addressable memory for area-and energy-efficient lifelong learning. IEEE Electron Device Letters. 2023;45(1):24-27.

Luo J, Chen C, Huang Q, HUANG R. A biomimetic tunnel FET-based spiking neuron for energy-efficient neuromorphic computing with reduced hardware cost. IEEE Transactions on Electron Devices. 2021;69(2):882-886.

Luo J, Chen C, Huang Q, HUANG R. A Biomimetic Tunnel FET-Based Spiking Neuron for Energy-Efficient Neuromorphic Computing With Reduced Hardware Cost. IEEE Transactions on Electron Devices. 2021;69(2):882-886.

Luo J, Liu T, Fu Z, Wei X, Yang M, Chen L, Huang Q, HUANG R. A novel ferroelectric FET-based adaptively-stochastic neuron for stimulated-annealing based optimizer with ultra-low hardware cost. IEEE Electron Device Letters. 2021;43(2):308-311.