A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for Area-and Energy-Efficient In-Memory-Searching System

Citation:

Xu W, Luo J, Chen Z, Fu B, Fu Z, Wang K, Huang Q, HUANG R. A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for Area-and Energy-Efficient In-Memory-Searching System. IEEE Electron Device Letters. 2024.