A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI

Citation:

Shao H, Luo J, Fu Z, Huang Q, HUANG R. A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI. 2023 China Semiconductor Technology International Conference (CSTIC). 2023:1-4.