A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning

Citation:

Luo J, Xu W, Fu B, Yu Z, Yang M, Li Y, Huang Q, HUANG R. A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022:226-227.