@proceedings {37898,
	title = {First demonstration of hafnia-based selector-free FeRAM with high disturb immunity through design technology co-optimization},
	journal = {2023 International Electron Devices Meeting (IEDM)},
	year = {2023},
	pages = {1-4},
	publisher = {IEEE},
	isbn = {9798350327670},
	author = {Fu, Zhiyuan and Cao, Shengjie and Hao Zheng and Luo, Jin and Huang, Qianqian and Ru HUANG}
}
