Citation:Nuo M, Wu Y, Yang J, Hao Y, Wang M, Wei J. Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High VDS. IEEE Transactions on Electron Devices. 2023;70:3462-3467.ExportDOI BibTex EndNote Tagged EndNote XML DOI
