Citation:
Moriyama C, Cheng Z, Huang Z, Ohno Y, Inoue K, Nagai Y, Shigekawa N, Liang J. Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering. Advanced Materials Technologies. 2025;10(21):e00437.