摘要:

We studied temperature-dependent amplified spontaneous emission (ASE) in CsPbBr3 perovskite thin films. For temperatures 180-360 K, a narrow-band lasing is observed. However, a new accompanying ASE band appears below 180 K, indicating a more complicated behavior. The two ASE bands are strongly correlated and in competition; they are assigned as exciton and bi-exciton recombination. We estimated the exciton binding energy (E-B = 27.3 meV) and that of the bi-exciton, which is lower than the E-B. The reduced effective mass of the exciton is estimated as mu = 0.11 m(c). This discovery identifies more details of the ASE phenomenon. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement