Origin of insulating behavior of the p-type LaAlO3/SrTiO 3 interface: Polarization-induced asymmetric distribution of oxygen vacancies

Citation:

Zhang L, Zhou X-F, Wang H-T, Xu J-J, Li J, Wang EG, Wei S-H. Origin of insulating behavior of the p-type LaAlO3/SrTiO 3 interface: Polarization-induced asymmetric distribution of oxygen vacancies. Physical Review B - Condensed Matter and Materials Physics. 2010;(12).