Masten HN, Lundh JS, Feygelson TI, Sasaki K, Cheng Z, Spencer JA, Liao P-Y, Hite JK, Pennachio DJ, Jacobs AG. Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 2024;124(15).

Li R, Hussain K, Liao ME, Huynh K, Bin Hoque MS, Wyant S, Koh YR, Xu Z, Wang Y, Luccioni DP. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. ACS Applied Materials & Interfaces. 2024.

Cheng Z, Huang Y-J, Zahiri B, Kwon P, Braun PV, Cahill DG. Ionic Peltier effect in Li-ion electrolytes. Physical Chemistry Chemical Physics. 2024.

Sun J, Cheng Z, Liang J, Shigekawa N, Kawamura K, Uratani H, Sakaida Y, Cahill DG. Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance. Applied Physics Letters. 2024;124(4).

Cheng Z, Ji X, Huang Z, Ohno Y, Inoue K, Nagai Y, Sakaida Y, Uratani H, Shigekawa N, Liang J. Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C. Advanced Electronic Materials (accepted). 2024.

Hobart KD, Feygelson TI, Tadjer MJ, Anderson TJ, Koehler AD, Graham Jr S, Goorsky M, Cheng Z, Yates L, Bai T. Diamond on nanopatterned substrate. 2023.

Liao ME, Huynh K, Cheng Z, Shi J, Graham S, Goorsky MS. Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3| 4H-SiC. Journal of Vacuum Science & Technology A. 2023;41(6).

Kagawa R, Cheng Z, Kawamura K, Ohno Y, Moriyama C, Sakaida Y, Ouchi S, Uratani H, Inoue K, Nagai Y. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes. Small. 2023:2305574.

Lee H, Zhou Y, Jung S, Li H, Cheng Z, He J, Chen J, Sokalski P, Dolocan A, Gearba‐Dolocan R. High‐Pressure Synthesis and Thermal Conductivity of Semimetallic θ‐Tantalum Nitride. Advanced Functional Materials. 2023:2212957.

Feng T, Zhou H, Cheng Z, Larkin L, Neupane M. A Critical Review of Thermal Transport across Wide and Ultrawide Bandgap Semiconductor Interfaces. ACS Applied Materials & Interfaces [Internet]. 2023;15(25):29655–29673. 访问链接

Cheng Z. (Invited, Digital Presentation) Thermal Conductance across Heterogeneously Integrated Interfaces for Thermal Management of Wide and Ultra-Wide Bandgap Electronics. Electrochemical Society Meeting Abstracts 241. 2022;(31):1318-1318.

Cheng Z, Shi J, Graham S. Fundamental understanding of thermal transport across solid interfaces. In: Thermal Management of Gallium Nitride Electronics. Elsevier; 2022. pp. 69-82.

Cheng Z, Zahiri B, Kwon P, Braun PV, Cahill DG. Ionic Peltier Effect in Li Ion Battery Electrolytes. arXiv preprint arXiv:2211.14949. 2022.

Lundh JS, Masten HN, Sasaki K, Jacobs AG, Cheng Z, Spencer J, Chen L, Gallagher J, Koehler AD, Konishi K. AlN-capped β-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. 2022 Device Research Conference (DRC). 2022:1-2.

Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nature Communications. 2022;13(1):7201.

Liang* J, Nagai H, Cheng* Z, Kawamura K, Shimizu Y, Ohno Y, Sakaida Y, Uratani H, Yoshida H, Nagai Y. Selective Direct Bonding of High Thermal Conductivity 3C-SiC Film to β-Ga2O3 for Top-Side Heat Extraction. arXiv preprint arXiv:2209.05669. 2022.

Cheng* Z, Ji X, Cahill DG. Battery absorbs heat during charging uncovered by ultra-sensitive thermometry. Journal of Power Sources. 2022;518:230762.

Cheng* Z, Graham S, Amano H, Cahill DG. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics. Applied Physics Letters. 2022;120(3):030501.

Green AJ, Speck J, Xing G, Moens P, Allerstam F, Gumaelius K, Neyer T, Arias-Purdue A, Mehrotra V, Kuramata A. Roadmap – β-Gallium oxide power electronics. APL Materials. 2022;10(2):029201.

Cheng* Z, Graham S. Room-temperature bonded thermally conductive semiconductor interfaces. In: Thermal Management of Gallium Nitride Electronics. Woodhead Publishing; 2022. pp. 359-377.