Citation:Gao Q, Zhang Z, Xu X, Song J, Li X, Wu Y. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications [Internet]. 2018;9.ExportDOI BibTex EndNote Tagged EndNote XML WebsiteSCI被引用次数：29. DOI
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Hu Q, Wu Y. Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors, in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE; 2020:1–3.
Li S, Gu C, Li X, HUANG R, Wu Y. 10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility, in 2020 IEEE International Electron Devices Meeting (IEDM). IEEE; 2020:40–5.
Xiong X, Kang J, Hu Q, Gu C, Gao T, Li X, Wu Y. Reconfigurable Logic-in-Memory and Multilingual Artificial Synapses Based on 2D Heterostructures. Advanced Functional Materials. 2020;30:1909645.
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Li S, Tian M, Gu C, WANG R, Wang M, Xiong X, Li X, HUANG R, Wu Y. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with I on= 970 $μ$A/$μ$m and on/off ratio near 10 11 at V ds= 0.5 V, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:3–5.
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Hu Q, Zhang Z, Wu Y. High performance optoelectronics based on CVD Mos2, in 2019 IEEE 13th International Conference on ASIC (ASICON). IEEE; 2019:1–3.
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Hu Q, Hu B, Gu C, Li T, Li S, Li S, Li X, Wu Y. Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering. IEEE Transactions on Electron Devices. 2019;66:4591–4596.
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Li S, Hu Q, Wang X, Li T, Li X, Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOX as Gate Dielectric. Ieee Electron Device Letters [Internet]. 2019;40:295-298. 访问链接SCI被引用次数：12.
