摘要:

A further leakage reduction of AlGaN/GaN HEMTs with cap gate (CG-HEMTs) has been achieved by optimizing the gate structure and the gate etching process. The optimized CG-HEMTs single finger power HEMTs deliver IDSmax = 533 mA/mm at least with gate length of 0.5um and show a median gate leakage current of 20 nA/mm  25℃ measured at a drain voltage of 200 V. The breakdown voltage (BV) of CG-HEMTswas evaluated by the variation of drain-to-gate spacing (LDG) larger than 8 um. Furthermore, we show that the forward voltage of CG-HEMTs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance.

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