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Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Citation:

Kuang W, Sun H, Liu M, Lin X, Chen D. Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate, in 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). Qingdao, China, China: IEEE; 2018:1-3.

Date Presented:

31 Oct.-3 Nov.

摘要:

A novel E-mode AlGaN/GaN HEMT with double-doped p-gate (DDP) is proposed to improve output current and verified by TCAD simulation. The heavily p-doped region of the AlGaN gate layer ensures enhancement-mode (E-mode) operation and the lightly p-doped region of the AlGaN gate layer reduces the channel resistance. The simulated results have demonstrated that DDP HEMT delivers a much larger maximum drain current (IMAX = 334 mA/mm) than the conventional p-gate (CP) HEMT (IMAX = 144 mA/mm) while maintaining a high threshold voltage (VTH ~1.5 V). The simulated results also indicate that the DDP gate structure could decrease the peak electric field (EC) and thus improve the reliability of the device under off-state high-drain-bias (HDBT).

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