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Experimentation and Simulation for Cap Gate AlGaN/GaN HEMT Power Devices

Citation:

Sun H, Kuang W, Lin X, Chen D. Experimentation and Simulation for Cap Gate AlGaN/GaN HEMT Power Devices, in 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). Shenzhen, China: IEEE; 2018.

Date Presented:

6-8 June

摘要:

Experimental and simulation I–V characteristics of the cap gate high electron mobility transistor (HEMT) are reported. The two-dimensional simulations results are in conformity with the realistic HEMT perfectly, indicating reliable and acceptable of the TCAD simulation method in GaN-based devices. Depending on this, further researches on the cap gate HEMT are carried out by TCAD software, which analyzes the impact of recessed depth of gate barrier, the dimension of LG and cap gate structure on GaN HEMT performances.

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