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Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surroundedby the Gate Channel

Citation:

Sun H, Chen J, Wang M, Liu M, Lin X, Chen D. Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surroundedby the Gate Channel, in 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). Beijing, China: IEEE; 2018.

Date Presented:

1-3 November

摘要:

A new planar MISHEMT structure is proposed with the drain surrounded (D-S) by the gate channel. The gate channel serves as the stop-ring of the drain voltage, eliminating the damages from the high voltage on the mesa edge and isolation area. As a result, the leakage of the D-S MISHEMT is found to be reduced by almost 3 orders comparing with the source surrounded (S-S) MISHEMT. A saturated output current density of 740 mA/mm and an ON-resistance of 13.09 Ω-mm are obtained for device with LG/LGS/LGD/WC = 1.5/5/20/250 μm. Meanwhile, the degradation of dynamic ON-resistance and off-state breakdown performance are investigated in both D-S and S-S MISHEMT, which indicates excellent reliability of the D-S MISHEMT.

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