<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hui Sun</style></author><author><style face="normal" font="default" size="100%">Jianguo Chen</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Meihua Liu</style></author><author><style face="normal" font="default" size="100%">Lin, Xinnan</style></author><author><style face="normal" font="default" size="100%">Dongmin Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surroundedby the Gate Channel</style></title><secondary-title><style face="normal" font="default" size="100%">2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">1-3 November</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/8246006</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Beijing, China</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A new planar MISHEMT structure is proposed with the drain surrounded (D-S) by the gate channel. The gate channel serves as the stop-ring of the drain voltage, eliminating the damages from the high voltage on the mesa edge and isolation area. As a result, the leakage of the D-S MISHEMT is found to be reduced by almost 3 orders comparing with the source surrounded (S-S) MISHEMT. A saturated output current density of 740 mA/mm and an ON-resistance of 13.09 Ω-mm are obtained for device with LG/LGS/LGD/WC = 1.5/5/20/250 μm. Meanwhile, the degradation of dynamic ON-resistance and off-state breakdown performance are investigated in both D-S and S-S MISHEMT, which indicates excellent reliability of the D-S MISHEMT.</style></abstract></record></records></xml>