@conference {20063,
	title = {Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surroundedby the Gate Channel},
	booktitle = {2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)},
	year = {2018},
	month = {1-3 November},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Beijing, China},
	abstract = {A new planar MISHEMT structure is proposed with the drain surrounded (D-S) by the gate channel. The gate channel serves as the stop-ring of the drain voltage, eliminating the damages from the high voltage on the mesa edge and isolation area. As a result, the leakage of the D-S MISHEMT is found to be reduced by almost 3 orders comparing with the source surrounded (S-S) MISHEMT. A saturated output current density of 740 mA/mm and an ON-resistance of 13.09 Ω-mm are obtained for device with LG/LGS/LGD/WC = 1.5/5/20/250 μm. Meanwhile, the degradation of dynamic ON-resistance and off-state breakdown performance are investigated in both D-S and S-S MISHEMT, which indicates excellent reliability of the D-S MISHEMT.},
	url = {https://ieeexplore.ieee.org/document/8246006},
	author = {Hui Sun and Jianguo Chen and Wang, Maojun and Meihua Liu and Lin, Xinnan and Dongmin Chen}
}
