<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kuang, Wenteng</style></author><author><style face="normal" font="default" size="100%">Hui Sun</style></author><author><style face="normal" font="default" size="100%">Meihua Liu</style></author><author><style face="normal" font="default" size="100%">Lin, Xinnan</style></author><author><style face="normal" font="default" size="100%">Dongmin Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate</style></title><secondary-title><style face="normal" font="default" size="100%">2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">31 Oct.-3 Nov.</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/8564875</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Qingdao, China, China</style></pub-location><pages><style face="normal" font="default" size="100%">1-3</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A novel E-mode AlGaN/GaN HEMT with double-doped p-gate (DDP) is proposed to improve output current and verified by TCAD simulation. The heavily p-doped region of the AlGaN gate layer ensures enhancement-mode (E-mode) operation and the lightly p-doped region of the AlGaN gate layer reduces the channel resistance. The simulated results have demonstrated that DDP HEMT delivers a much larger maximum drain current (IMAX = 334 mA/mm) than the conventional p-gate (CP) HEMT (IMAX = 144 mA/mm) while maintaining a high threshold voltage (VTH ~1.5 V). The simulated results also indicate that the DDP gate structure could decrease the peak electric field (EC) and thus improve the reliability of the device under off-state high-drain-bias (HDBT).</style></abstract></record></records></xml>