@conference {20065,
	title = {Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate},
	booktitle = {2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
	year = {2018},
	month = {31 Oct.-3 Nov.},
	pages = {1-3},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Qingdao, China, China},
	abstract = {A novel E-mode AlGaN/GaN HEMT with double-doped p-gate (DDP) is proposed to improve output current and verified by TCAD simulation. The heavily p-doped region of the AlGaN gate layer ensures enhancement-mode (E-mode) operation and the lightly p-doped region of the AlGaN gate layer reduces the channel resistance. The simulated results have demonstrated that DDP HEMT delivers a much larger maximum drain current (IMAX = 334 mA/mm) than the conventional p-gate (CP) HEMT (IMAX = 144 mA/mm) while maintaining a high threshold voltage (VTH ~1.5 V). The simulated results also indicate that the DDP gate structure could decrease the peak electric field (EC) and thus improve the reliability of the device under off-state high-drain-bias (HDBT).},
	url = {https://ieeexplore.ieee.org/document/8564875},
	author = {Kuang, Wenteng and Hui Sun and Meihua Liu and Lin, Xinnan and Dongmin Chen}
}
