<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hui Sun</style></author><author><style face="normal" font="default" size="100%">Meihua Liu</style></author><author><style face="normal" font="default" size="100%">Liu, Peng</style></author><author><style face="normal" font="default" size="100%">Lin, Xinnan</style></author><author><style face="normal" font="default" size="100%">Xiaole Cui</style></author><author><style face="normal" font="default" size="100%">Jianguo Chen</style></author><author><style face="normal" font="default" size="100%">Dongmin Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on150-mm silicon substrate</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0038110117300308</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">130</style></volume><pages><style face="normal" font="default" size="100%">28-32</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A further leakage reduction of AlGaN/GaN HEMTs with cap gate (CG-HEMTs) has been achieved by optimizing the gate structure and the gate etching process. The optimized CG-HEMTs single finger power HEMTs deliver IDSmax = 533 mA/mm at least with gate length of 0.5um and show a median gate leakage current of 20 nA/mm&amp;nbsp; 25℃ measured at a drain voltage of 200 V. The breakdown voltage (BV) of CG-HEMTswas evaluated by the variation of drain-to-gate spacing (LDG) larger than 8 um. Furthermore, we show that the forward voltage of CG-HEMTs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance.</style></abstract></record></records></xml>