@article {20062,
	title = {Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on150-mm silicon substrate},
	journal = {Solid-State Electronics},
	volume = {130},
	year = {2017},
	pages = {28-32},
	abstract = {A further leakage reduction of AlGaN/GaN HEMTs with cap gate (CG-HEMTs) has been achieved by optimizing the gate structure and the gate etching process. The optimized CG-HEMTs single finger power HEMTs deliver IDSmax = 533 mA/mm at least with gate length of 0.5um and show a median gate leakage current of 20 nA/mm\&nbsp; 25{\textcelsius} measured at a drain voltage of 200 V. The breakdown voltage (BV) of CG-HEMTswas evaluated by the variation of drain-to-gate spacing (LDG) larger than 8 um. Furthermore, we show that the forward voltage of CG-HEMTs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance.},
	url = {https://www.sciencedirect.com/science/article/pii/S0038110117300308},
	author = {Hui Sun and Meihua Liu and Liu, Peng and Lin, Xinnan and Xiaole Cui and Jianguo Chen and Dongmin Chen}
}
