摘要:

The compatibility of Au-free (Ti/Al/Ti/TiN)ohmic contacts in the gate-first double-metal (GFDM)process for AlGaN/GaN metal-insulator-semiconductorhigh-electron-mobility transistors (MIS-HEMTs) and Schottkybarrier diodes (SBDs) on the same 150-mm wafer wasinvestigated and discussed for the first time, including contactpre-treatments, Al diffusion in dielectric layers, and vias(contact windows between two metal layers) etching conditions.All of these steps are crucial to ohmic contacts as wellas overall AlGaN/GaN device fabrication process. With theoptimized ohmic contacts steps, not only an extremely lowohmic contact resistance (RC) value of 1.07 ·mm but alsoan excellent uniformity on the 150-mm wafer was obtained.The performance and uniformity of the MIS-HEMTs andSBDs based on the optimized GFDM process were alsodiscussed.

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