<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hui Sun</style></author><author><style face="normal" font="default" size="100%">Meihua Liu</style></author><author><style face="normal" font="default" size="100%">Liu, Peng</style></author><author><style face="normal" font="default" size="100%">Lin, Xinnan</style></author><author><style face="normal" font="default" size="100%">Jianguo Chen</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Dongmin Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Optimization of Au-Free Ohmic Contact Basedon the Gate-First Double-Metal AlGaN/GaNMIS-HEMTs and SBDs Process</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE TRANSACTIONS ON ELECTRON DEVICES</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/8187743</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">65</style></volume><pages><style face="normal" font="default" size="100%">622-628</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The compatibility of Au-free (Ti/Al/Ti/TiN)ohmic contacts in the gate-first double-metal (GFDM)process for AlGaN/GaN metal-insulator-semiconductorhigh-electron-mobility transistors (MIS-HEMTs) and Schottkybarrier diodes (SBDs) on the same 150-mm wafer wasinvestigated and discussed for the first time, including contactpre-treatments, Al diffusion in dielectric layers, and vias(contact windows between two metal layers) etching conditions.All of these steps are crucial to ohmic contacts as wellas overall AlGaN/GaN device fabrication process. With theoptimized ohmic contacts steps, not only an extremely lowohmic contact resistance (RC) value of 1.07 ·mm but alsoan excellent uniformity on the 150-mm wafer was obtained.The performance and uniformity of the MIS-HEMTs andSBDs based on the optimized GFDM process were alsodiscussed.</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record></records></xml>