@article {20061,
	title = {Optimization of Au-Free Ohmic Contact Basedon the Gate-First Double-Metal AlGaN/GaNMIS-HEMTs and SBDs Process},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {65},
	year = {2018},
	pages = {622-628},
	abstract = {The compatibility of Au-free (Ti/Al/Ti/TiN)ohmic contacts in the gate-first double-metal (GFDM)process for AlGaN/GaN metal-insulator-semiconductorhigh-electron-mobility transistors (MIS-HEMTs) and Schottkybarrier diodes (SBDs) on the same 150-mm wafer wasinvestigated and discussed for the first time, including contactpre-treatments, Al diffusion in dielectric layers, and vias(contact windows between two metal layers) etching conditions.All of these steps are crucial to ohmic contacts as wellas overall AlGaN/GaN device fabrication process. With theoptimized ohmic contacts steps, not only an extremely lowohmic contact resistance (RC) value of 1.07 {\textperiodcentered}mm but alsoan excellent uniformity on the 150-mm wafer was obtained.The performance and uniformity of the MIS-HEMTs andSBDs based on the optimized GFDM process were alsodiscussed.},
	url = {https://ieeexplore.ieee.org/document/8187743},
	author = {Hui Sun and Meihua Liu and Liu, Peng and Lin, Xinnan and Jianguo Chen and Wang, Maojun and Dongmin Chen}
}
