Citation:
Tang K, Scheuermann AG, Zhang L, McIntyre PC. Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks. Journal of Applied Physics [Internet]. 2017;122:094503.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
