@article {26647,
	title = {Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks},
	journal = {Journal of Applied Physics},
	volume = {122},
	number = {9},
	year = {2017},
	pages = {094503},
	keywords = {\&quot;alumina, capacitance, electrical resistivity, gallium arsenide, III-V semiconductors, indium compounds, MIS structures, palladium\&quot;},
	url = {https://aip.scitation.org/doi/abs/10.1063/1.5000359},
	author = {K. Tang and A. G. Scheuermann and L. Zhang and P. C. McIntyre}
}
