摘要:

A ridge-channel AlGaN/GaN high-electron mobility transistor (HEMT) utilizing selective-area growth and epitaxial lateral overgrowth (ELO) technique is proposed in this work to achieve high-performance normally-off devices. It has a c-plane platform for the source and the drain contacts, and sidewalls of lattice plane for the gate contact. The sidewalls have characteristics of weak polarization and thin barrier, which are advantageous for realizing normally-off operation. Two ridge HEMTs with triangular and trapezoid channel are designed. Theoretical simulation demonstrates a threshold voltage of 0.03 V for the sidewall channel with reduced polarization and barrier thickness, and a threshold voltage of 1.1–1.3 V for the ridge HEMTs assuming no polarization charge in sidewall channel. The ridge-channel device also exhibits high saturation drain current. The ELO-based ridge-channel opens a new way to achieve normally-off AlGaN/GaN HEMT.

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