Jiang J, Zhou X, Du A, Peng L-M, Wang E, Mu S, Zhong Z. A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface. Superlattices and Microstructures. 1993;(3):379-.

Wang EG, Jiang J, Zhou XC, Du AY, Peng LM. Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices. Superlattices and Microstructures. 1993;(3):387-.

Wang EG, Xu JH, Su WP, Ting CS. Electronic structure of periodic random superlattice [(GaAs) m/(AlAs)n]l. Applied Physics Letters. 1993;(10):1411-1413.

Wang E. A model for the buffer layer formed on silicon during HFCVD diamond growth. Physica B: Physics of Condensed Matter. 1993;(1-4):85-89.

Xu JH, Wang EG, Ting CS, Su WP. Tight-binding theory of the electronic structures for rhombohedral semimetals. Physical Review B. 1993;(23):17271-17279.