Wang E-G. Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface. Superlattices and Microstructures. 1991;(4):431-435.

Wang E-G, Jin W-M, Zhang L-Y, Wang H-Y. Local electronic structures of the native defects in modulation-doped AlAs/GaAs superlattices. Journal of Physics: Condensed Matter. 1990;(19):4405-4416.

Wang E-G, Zhang L-Y, Wang H-Y. Local density of states of silicon impurity in lightly and heavily doped AlAs/GaAs superlattices. Materials Science and Engineering B. 1990;(3):371-375.

Wang E, Zhang L, Wang H. Influence of impurities and vacancies on electronic properties of AlAs/GaAs superlattices. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 1990;(4):243-252.

Liu Y, Wang E. Theoretical approach to the optimal preheating temperature for cw CO 2 laser annealing of semiconductors. Journal of Applied Physics. 1987;(3):1006-1009.

Wang E, Huang H. ELECTRON STATES IN DOPING SUPERLATTICE - Si-NIPI STRUCTURE. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 1985;(4):446-450.