INTRODUCTION Smoking cessation should be part of tuberculosis (TB) treatment, but a cessation service is not available as part of a routine TB service in most low- and middle-income countries. WHO and The International Union Against Tuberculosis and Lung Disease (The Union) issued a guideline and China implemented a pilot project 5 years ago. This study aimed to determine changes in smoking status among TB patients at 5 years after completion of anti-TB treatment to observe long-term outcome of a smoking cessation project whose baseline characteristics were associated with a relapse of smoking behavior. METHODS A prospective longitudinal study was conducted 5 years after completion of anti-TB treatment to assess changes in patient smoking status against individual baseline data that were entered into a database at the time of TB registration. The patients were tracked by trained village doctors and validated by township health staff. Their smoking status was assessed and entered into the database and analysed. RESULTS Of the 800 TB patients registered at baseline, 650 (81.2%) were tracked. Ninety-one (11.4%) patients died and 59 (7.4%) were lost to follow-up. The rates of remaining non-smoking after 5 years were 82.0%, 63.0%, 49.6%, 43.5% and 30.0%, respectively for non-smokers, ex-smokers, current smokers who received cessation intervention, recent quitters, and current smokers not on a cessation intervention. The odds of smoking relapse were significantly higher for those aged >= 65 years (p=0.003) and registered in Xingguo County (p=0.025). CONCLUSIONS Findings from this study confirmed that non-smokers, ex-smokers and current smokers who received cessation intervention at baseline maintained higher non-smoking rates compared with those who did not receive the intervention. To prevent relapse, intensive cessation support should be given to TB patients aged >= 65 years. TB programme managers need to ensure integration and provision of smoking cessation advice and smoke-free policy in routine TB services.

INTRODUCTION Smoking cessation should be part of tuberculosis (TB) treatment, but a cessation service is not available as part of a routine TB service in most low- and middle-income countries. WHO and The International Union Against Tuberculosis and Lung Disease (The Union) issued a guideline and China implemented a pilot project 5 years ago. This study aimed to determine changes in smoking status among TB patients at 5 years after completion of anti-TB treatment to observe long-term outcome of a smoking cessation project whose baseline characteristics were associated with a relapse of smoking behavior. METHODS A prospective longitudinal study was conducted 5 years after completion of anti-TB treatment to assess changes in patient smoking status against individual baseline data that were entered into a database at the time of TB registration. The patients were tracked by trained village doctors and validated by township health staff. Their smoking status was assessed and entered into the database and analysed. RESULTS Of the 800 TB patients registered at baseline, 650 (81.2%) were tracked. Ninety-one (11.4%) patients died and 59 (7.4%) were lost to follow-up. The rates of remaining non-smoking after 5 years were 82.0%, 63.0%, 49.6%, 43.5% and 30.0%, respectively for non-smokers, ex-smokers, current smokers who received cessation intervention, recent quitters, and current smokers not on a cessation intervention. The odds of smoking relapse were significantly higher for those aged >= 65 years (p=0.003) and registered in Xingguo County (p=0.025). CONCLUSIONS Findings from this study confirmed that non-smokers, ex-smokers and current smokers who received cessation intervention at baseline maintained higher non-smoking rates compared with those who did not receive the intervention. To prevent relapse, intensive cessation support should be given to TB patients aged >= 65 years. TB programme managers need to ensure integration and provision of smoking cessation advice and smoke-free policy in routine TB services.

The electron-transporting materials (ETMs) with excellent electron injection (EI) and electron transporting properties are prerequisites for highly efficient organic light-emitting diodes (OLEDs). In this work, we report a novel ETM, 2,7-di([3,2 `:6 `,3 `'-terpyridin]-4 `-yl)-9,9 `-spirobifluorene (27-mTPSF), which is synthesized by combining electron-withdrawing terpyridine (TPY) moieties with rigid twisted spirobifluorene. This rigid twisted structure helps to maintain the morphological stability of the amorphous film and contributes to the enhancement of the device lifetime. The nitrogen atom at the meta-position on the peripheral pyridine in 27-mTPSF can enhance the horizontal molecular orientation and the electron-transporting property. A green phosphorescent OLED (PhOLED) based on tris[2-(p-tolyl)pyridine]iridium(iii) (Ir(mppy)(3)) as the emitter and 27-mTPSF as ETM displayed a maximum external quantum efficiency (EQE) of 23.1%, and a half-life (T-50) of 77, 4330 and 243 495 h at an initial luminance of 10 000, 1000 and 100 cd m(-2), respectively, which are significantly superior to those of the device based on the conventional ETM 1,3,5-tris(N-phenylbenzimid azol-2-yl-benzene (TPBi). These results indicate a potential application for the ``(A)(n)-D-(A)(n)'' structured terpyridine ETMs.

The electron-transporting materials (ETMs) with excellent electron injection (EI) and electron transporting properties are prerequisites for highly efficient organic light-emitting diodes (OLEDs). In this work, we report a novel ETM, 2,7-di([3,2 `:6 `,3 `'-terpyridin]-4 `-yl)-9,9 `-spirobifluorene (27-mTPSF), which is synthesized by combining electron-withdrawing terpyridine (TPY) moieties with rigid twisted spirobifluorene. This rigid twisted structure helps to maintain the morphological stability of the amorphous film and contributes to the enhancement of the device lifetime. The nitrogen atom at the meta-position on the peripheral pyridine in 27-mTPSF can enhance the horizontal molecular orientation and the electron-transporting property. A green phosphorescent OLED (PhOLED) based on tris[2-(p-tolyl)pyridine]iridium(iii) (Ir(mppy)(3)) as the emitter and 27-mTPSF as ETM displayed a maximum external quantum efficiency (EQE) of 23.1%, and a half-life (T-50) of 77, 4330 and 243 495 h at an initial luminance of 10 000, 1000 and 100 cd m(-2), respectively, which are significantly superior to those of the device based on the conventional ETM 1,3,5-tris(N-phenylbenzimid azol-2-yl-benzene (TPBi). These results indicate a potential application for the ``(A)(n)-D-(A)(n)'' structured terpyridine ETMs.

All-inorganic CsPbI2Br perovskite has attracted increasing attention, owing to its outstanding thermal stability and suitable bandgap for optoelectronic devices. However, the substandard power conversion efficiency (PCE) and large energy loss (E-loss) of CsPbI2Br perovskite solar cells (PSCs) caused by the low quality and high trap density of perovskite films still limit the application of devices. Herein, the post-treatment of evaporating cesium bromide (CsBr) is utilized on top of the perovskite surface to passivate the CsPbI2Br-hole-transporting layer interface and reduce E-loss. The results of microzone photoluminescence indicate that the evaporated CsBr gathered at the grain boundaries of CsPbI2Br layers and Br-enriched perovskites (CsPbIxBr3-x, x < 2) are formed, which can provide protection for CsPbI2Br. Therefore, the gaps between crystal grains are filled up, and the recombination loss of the all-inorganic CsPbI2Br PSCs is reduced accordingly. The champion device exhibits high open-circuit voltage and a PCE of 1.271 V and 16.37%, respectively. This is the highest reported PCE among all-inorganic CsPbI2Br PSCs reported so far. In addition, the stability of CsPbI2Br PSCs is effectively improved by CsBr passivation, and the device without encapsulation can retain 86% of its initial PCE after 1368 h of storage, which is beneficial for practical applications.

All-inorganic CsPbI2Br perovskite has attracted increasing attention, owing to its outstanding thermal stability and suitable bandgap for optoelectronic devices. However, the substandard power conversion efficiency (PCE) and large energy loss (E-loss) of CsPbI2Br perovskite solar cells (PSCs) caused by the low quality and high trap density of perovskite films still limit the application of devices. Herein, the post-treatment of evaporating cesium bromide (CsBr) is utilized on top of the perovskite surface to passivate the CsPbI2Br-hole-transporting layer interface and reduce E-loss. The results of microzone photoluminescence indicate that the evaporated CsBr gathered at the grain boundaries of CsPbI2Br layers and Br-enriched perovskites (CsPbIxBr3-x, x < 2) are formed, which can provide protection for CsPbI2Br. Therefore, the gaps between crystal grains are filled up, and the recombination loss of the all-inorganic CsPbI2Br PSCs is reduced accordingly. The champion device exhibits high open-circuit voltage and a PCE of 1.271 V and 16.37%, respectively. This is the highest reported PCE among all-inorganic CsPbI2Br PSCs reported so far. In addition, the stability of CsPbI2Br PSCs is effectively improved by CsBr passivation, and the device without encapsulation can retain 86% of its initial PCE after 1368 h of storage, which is beneficial for practical applications.

High efficiency organic-inorganic hybrid perovskite solar cells have attracted significant attention and experienced a rapid development in recent years. Lithium-doped spiro-OMeTAD is one of the most commonly used hole transporting material, however, the hygroscopicity of lithium dopant usually causes serious moisture instability of devices. Herein, we demonstrate a dopant-free spiro-OMeTAD as hole transporting layer to improve the ambient stability of planar perovskite solar cells. With the optimization of the thickness of spiro-OMeTAD layer, the dopant-free spiro-OMeTAD based device achieved a comparable device performance with a champion power conversion efficiency of 16.92%. Moreover, the unencapsulated dopant-free device showed significantly improved stability, which still maintained 95% of its initial efficiency after storage in ambient environment for 60 days. This work provides a simple and valid approach to overcome the instability issue of spiro-OMeTAD based devices, paving a way to manufacture more stable and efficient perovskite photovoltaics.

Cs2AgBiBr6 having a double perovskite structure is expected to achieve non-lead and stable optoelectronic devices, and has received wide attention recently. A strategy for improving of perovskite films via Rubidium cation (Rb+) is for the first time reported. When Rb+ was incorporated into Cs2AgBiBr6 to form (Cs1-xRbx)(2)AgBiBr6, the absorption at long wavelength was enhanced and the density of defect state was reduced without changing the crystal lattice. Furthermore, the mechanism of Rb+ doping to improve double perovskites and the optimal doping ratio was studied in this report. The average power conversion efficiency of doped devices is nearly 15% higher than that of standard devices from 20 devices of each group. Moreover, in the champion device, the power conversion efficiency achieved 1.52% with a high fill factory of 0.788.

Interfacial modification as a feasible strategy to improve the properties of perovskite solar cells (PSCs) has been widely studied in recent years. In this work, PbCl2 modification at the interface of SnO2/CH3NH3PbI3 was used for CH3NH3PbI3-based planar PSCs. The introduction of PbCl2 between SnO2 and CH3NH3PbI3 layers boosted the crystallization of perovskite film, which promoted the photovoltaic properties of corresponding PSCs. The open circuit voltage (VOC) and fill factor (FF) of the PbCl2-modified devices (1 mg/mL) were 1.11 V and 0.79, respectively, which were both higher than those of the reference devices without PbCl2 (1.04 V and 0.76). Moreover, a steady-state power output efficiency exceeding 19% was obtained for the PbCl2-modified devices (1 mg/mL), which implied that PbCl2 modification was an effective and low cost strategy for efficient PSCs.

Flexible perovskite solar cells (PSCs) were ideal candidates for wearable devices due to the merits of flexibility, high efficiency, and being lightweight, and they could be fabricated in a continuous roll-to-roll production process to achieve large-area and low cost devices. Herein, the high efficiency (up to 18.53%) and fill factor (0.81) of flexible PSCs (ITO/SnO2/KCl/MAPbI(3)/spiro-OMeTAD/Ag) were achieved by low-pressure assisted solution processing under low temperature (<= 100 degrees C). The surface morphology and crystallinity of perovskite films were effectively promoted by the KCl modification and the defect density of perovskite films as well as the hysteresis of the corresponding devices was reduced accordingly. In addition, the stability and bendability of the KCl-modified flexible PSCs were improved simultaneously. To the best of our knowledge, both the efficiency and fill factor are the best among all flexible PSCs reported to date. Therefore, the insertion of KCl between SnO2 and MAPbI(3) layers provided a promising strategy for highly efficient flexible PSCs fabricated in low temperature (<= 100 degrees C) conditions.

Flexible perovskite solar cells (PSCs) were ideal candidates for wearable devices due to the merits of flexibility, high efficiency, and being lightweight, and they could be fabricated in a continuous roll-to-roll production process to achieve large-area and low cost devices. Herein, the high efficiency (up to 18.53%) and fill factor (0.81) of flexible PSCs (ITO/SnO2/KCl/MAPbI(3)/spiro-OMeTAD/Ag) were achieved by low-pressure assisted solution processing under low temperature (<= 100 degrees C). The surface morphology and crystallinity of perovskite films were effectively promoted by the KCl modification and the defect density of perovskite films as well as the hysteresis of the corresponding devices was reduced accordingly. In addition, the stability and bendability of the KCl-modified flexible PSCs were improved simultaneously. To the best of our knowledge, both the efficiency and fill factor are the best among all flexible PSCs reported to date. Therefore, the insertion of KCl between SnO2 and MAPbI(3) layers provided a promising strategy for highly efficient flexible PSCs fabricated in low temperature (<= 100 degrees C) conditions.

Flexible perovskite solar cells (PSCs) were ideal candidates for wearable devices due to the merits of flexibility, high efficiency, and being lightweight, and they could be fabricated in a continuous roll-to-roll production process to achieve large-area and low cost devices. Herein, the high efficiency (up to 18.53%) and fill factor (0.81) of flexible PSCs (ITO/SnO2/KCl/MAPbI(3)/spiro-OMeTAD/Ag) were achieved by low-pressure assisted solution processing under low temperature (<= 100 degrees C). The surface morphology and crystallinity of perovskite films were effectively promoted by the KCl modification and the defect density of perovskite films as well as the hysteresis of the corresponding devices was reduced accordingly. In addition, the stability and bendability of the KCl-modified flexible PSCs were improved simultaneously. To the best of our knowledge, both the efficiency and fill factor are the best among all flexible PSCs reported to date. Therefore, the insertion of KCl between SnO2 and MAPbI(3) layers provided a promising strategy for highly efficient flexible PSCs fabricated in low temperature (<= 100 degrees C) conditions.

Silver bismuth iodide (Ag-Bi-I) as an environmentally friendly semiconductor with suitable band gap and high stability has been regarded as a potential photovoltaic material, while the reported mesoscopic devices all showed poor open circuit voltage (V-oc) of 0.5-0.6 V. Here, we successfully fabricated AgBiI4 planar heterojunction solar cells via a solution method with a Voc approaching 0.9 V, in which 2 wt % lithium bis(trifluoromethylsulfonyl)-imide (Li-TFSI) was added into the AgI:BiI3 precursor. The device presents a power conversion efficiency of 2.50 +/- 0.20% with a V-oc of 0.82 +/- 0.20 V. Experimental results indicated that the readily coordinated component in the organic salt, TFSI-, could assist film growth and result in a full coverage morphology. Furthermore, double layer devices showed the carrier separation occurred in the interface of SnO2/AgBiI4. These results indicated interface extraction and film enhancement should be concerned in further improvements.