Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

Citation:

Guo X, Xu F, Lang J, Wang J, Zhang L, Ji C, Ji C, Zhang Z, Tan F, Wu Y, et al. Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN. Applied Physics Letters. 2025;126:082104.